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| PD - 94284A HEXFET(R) POWER MOSFET SURFACE MOUNT (SMD-0.5) IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number IRF5NJ6215 BVDSS -150V RDS(on) 0.29 ID -11A Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-0.5 Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25C ID @ VGS = -10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight -11 -7.2 -44 75 0.6 20 130 -11 7.5 10 -55 to 150 300 (for 5 s) 1.0 (Typical) Units A W W/C V mJ A mJ V/ns o C g For footnotes refer to the last page www.irf.com 1 9/11/01 IRF5NJ6215 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units -- -0.17 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.29 -4.0 -- -25 -250 -100 100 66 13 40 25 65 75 53 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = -250A Reference to 25C, ID = -1.0mA VGS = -10V, ID = -7.2A VDS = VGS, ID = -250A VDS = -25V, IDS = -7.2A VDS = -150V ,VGS=0V VDS = -120V, VGS = 0V, TJ =125C VGS = -20V VGS = 20V VGS =-10V, ID = -7.2A VDS = -120V VDD = -75V, ID = -7.2A, VGS =-10V, RG = 6.8 BVDSS Drain-to-Source Breakdown Voltage -150 BV DSS/T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 2.3 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 990 230 120 -- -- -- pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- -11 -44 -1.6 240 1.7 Test Conditions A V ns C Tj = 25C, IS = -7.2A, VGS = 0V Tj = 25C, IF = -7.2A, di/dt -100A/s VDD -25V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units -- -- 1.67 C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF5NJ6215 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP 100 10 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP 1 1 -4.5V -4.5V 20s PULSE WIDTH T = 25 C J 1 10 100 0.1 0.1 0.1 0.1 20s PULSE WIDTH T = 150 C J 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 -I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C 10 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -11A 2.0 1.5 1.0 1 0.5 0.1 4 6 8 15 V DS = -50V 20s PULSE WIDTH 10 12 14 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5NJ6215 2000 1600 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -7.2A 16 VDS = -120V VDS = -75V VDS = -30V C, Capacitance (pF) Ciss 1200 12 800 C oss C rss 8 400 4 0 1 10 100 0 0 20 FOR TEST CIRCUIT SEE FIGURE 13 40 60 80 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -ISD , Reverse Drain Current (A) TJ = 150 C 10 -I D, Drain-to-Source Current (A) 10 TJ = 25 C 1 1ms 1 10ms Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 -VDS , Drain-toSource Voltage (V) 0.1 0.4 V GS = 0 V 0.8 1.2 1.6 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5NJ6215 12 V DS VGS RD -ID , Drain Current (A) D.U.T. + VGS Pulse Width 1 s Duty Factor 0.1 % 4 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 0 25 50 75 100 125 150 10% TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.001 0.01 1 PDM t1 t2 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - 8 RG V DD 5 IRF5NJ6215 250 VDS L EAS , Single Pulse Avalanche Energy (mJ) RG D .U .T IA S V DD VD D A D R IV E R 200 ID -3.2A -4.6A BOTTOM -7.2A TOP VGS -20V tp 0.0 1 150 100 15V 50 Fig 12a. Unclamped Inductive Test Circuit IAS 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG -12V 12V .2F .3F -10V QGS VG QGD VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF5NJ6215 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = - 50 V, Starting TJ = 25C, L= 5.0mH Peak IAS = -7.2A, VGS = -10 V, RG= 25 ISD -7.2A, di/dt -390 A/s, Pulse width 300 s; Duty Cycle 2% VDD -150V, TJ 150C Case Outline and Dimensions -- SMD-0.5 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 09/01 www.irf.com 7 |
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